JPH0440320B2 - - Google Patents
Info
- Publication number
- JPH0440320B2 JPH0440320B2 JP7437485A JP7437485A JPH0440320B2 JP H0440320 B2 JPH0440320 B2 JP H0440320B2 JP 7437485 A JP7437485 A JP 7437485A JP 7437485 A JP7437485 A JP 7437485A JP H0440320 B2 JPH0440320 B2 JP H0440320B2
- Authority
- JP
- Japan
- Prior art keywords
- waveform
- single crystal
- electron beam
- crystal layer
- amplitude
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 238000009826 distribution Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437485A JPS61236678A (ja) | 1985-04-10 | 1985-04-10 | 半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置 |
| US06/762,374 US4662949A (en) | 1985-02-15 | 1985-08-05 | Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam |
| US06/904,942 US4746803A (en) | 1985-02-15 | 1986-09-08 | Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437485A JPS61236678A (ja) | 1985-04-10 | 1985-04-10 | 半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61236678A JPS61236678A (ja) | 1986-10-21 |
| JPH0440320B2 true JPH0440320B2 (en]) | 1992-07-02 |
Family
ID=13545329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7437485A Granted JPS61236678A (ja) | 1985-02-15 | 1985-04-10 | 半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61236678A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180126542A (ko) * | 2016-05-25 | 2018-11-27 | 가부시키가이샤 사무코 | 실리콘 단결정 제조 방법 및 장치 |
-
1985
- 1985-04-10 JP JP7437485A patent/JPS61236678A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180126542A (ko) * | 2016-05-25 | 2018-11-27 | 가부시키가이샤 사무코 | 실리콘 단결정 제조 방법 및 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61236678A (ja) | 1986-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |